Erratum to: Carrier-driven magnetic and topological phase transitions in twodimensional III-V semiconductors

Magnetic domains in III-V magnetic semiconductors

Recent progress in the theoretical understanding of magnetic anisotropy and stiffness in III-V magnetic semiconductors is exploited for predictions of magnetic domain characteristics and methods of their tuning. We evaluate the width and the energy of domain walls as well as the period of stripe domains in perpendicular films. The computed stripe width W51.1 mm for Ga0.957Mn0.043As/In0.16Ga0.84...

Anisotropic exchange interactions in III-V diluted magnetic semiconductors

The RKKY interaction between substitutional Mn local moments in GaAs is both spin-direction dependent and spatially anisotropic. In this paper we address the strength of these anisotropies using a semiphenomenological tight-binding model that treats the hybridization between Mn d-orbitals and As p-orbitals perturbatively and accounts realistically for its nonlocality. We show that valence-band ...

Ferromagnetism in (III,Mn)V Semiconductors

Ferromagnetism in magnetically doped III-V semiconductors.

The origin of ferromagnetism in semimagnetic III-V materials is discussed. The indirect exchange interaction caused by virtual electron excitations from magnetic impurity acceptor levels to the valence band can explain ferromagnetism in GaAs(Mn) in both degenerate and nondegenerate samples. Formation of ferromagnetic clusters and the percolation picture of phase transition describes well all av...

Composition Fluctuations in Iii-v Semiconductors

Electron microscopy studies have previously revealed the presence of fine scale (lOnm) variations of contrast within III-V compound semiconductor epilayers. Using a pulsed laser atom probe it has been possible to study the microchemistry of these layers at very high resolution. This study has shown that in epilayers of GalnAs, AlInAs and GaAHnAs there are variations of up to 10% in composition....